1 2 3 15.8 0.2 8 . 0 0 . 2 6.5 0.3 4 . 9 0 . 25 21 0.5 20.4 0.4 pin 2.2 0.15 3.0 0.1 5.4 0.15 1.2 0.15 0.6 0.1 5.0 0.15 2.0 0.15 2.4 0.2 |? 3 . 6 0 . 1 5 0.84 0.95 0.72 0.85 ) ( i f = 4 0 a , t c = 1 2 5 ?? ) v o l ta g e ( i f = 4 0 a , t c = 2 5 ?? features mechanical data p o s i t i on: a ny maximum ratings and electrical characteristics ratings at 25 a m b i ent t e m pe r a t u r e un l e s s o t h e r w i s e s pe c i f i ed. un i t s m a x i m um r e c u rr e nt p eak r e v e r s e v o l t age v rrm v m a x i m u m r ms v o l t a g e v r m s v m a x i m um d c b l o c k i ng v o l t a g e v dc v m a x i m um a v e r a g e f o r w a r d t o t a l de v i c e m r e c t i f i e d c u r r e n t @ t c = 1 05 c i f (a v ) a p e ak f o r w a r d s u r ge c u rr e nt 8.3 m s s i n g l e h a l f b s i ne - w a v e s u pe r i m p o s e d on r ated l o a d i f s m a maximum forward (i f = 20 a,t c =25 ?? ) maximum reverse current @t a = 2 5 at rated dc blocking voltage @t a = 1 2 5 maximum thermal resistance (note2) r j c /w operating junction temperature range t j storage temperature range t stg m a 30 35 40 45 50 60 80 100 4 0 400 21 2 5 28 32 35 42 56 70 3 0 35 40 4 5 50 60 80 100 v o l t a g e r a n g e: 3 0 - 10 0 v curr e n t : 4 0 a metal silicon junction, majority carrier conduction. ca s e : j e d e c t o - 3p , m o l ded p l a s t i c body schottky barrier rectifier s h i gh c u r r ent c apa c i t y , l o w f o r w a r d v o l t age d r op. n o t e : 1. thermal resistance from junction to case. - 5 5 - --- + 1 50 - 5 5 - --- + 15 0 t e r m i na l s : s o l de r a b l e per m i l - s t d - 750, 1 1 m e t hod 2026 i r v f 1.0 1.4 to-3p(to-247ad) mbr 4 0 3 0 p t - - - mbr 4 0 100 p t mbr mbr mbr mbr mbr mbr mbr mbr 4 030pt 4035pt 4040pt 4045pt 4050pt 4060pt 4080pt 40100pt g ua r d r i ng f or o v er v o l t age p r o t e c t i on. high surge capacity. for use in low voltage, high frequency inverters, free 111 wheeling, and polarity protection applications. p o l a r i t y : a s m a r k e d w e i gh t : 0.223 ounce, 6.3 grams 100 v - 0.80 single phase,half wave,60hz,resistive or inductive load.for capactive load,derate current by 20%. dimensions in millimeters (i f = 20 a,t c =125 ?? ) 0.57 0.70 diode semiconductor korea www.diode.kr
mbr4050pt-mbr40100pt 20 1.0 mbr4030pt-mbr4045pt 100 10 1.0 1.1 0.9 0.8 0.7 0.6 0.5 0.4 1.2 40 t j = 125 ?? t j = 2 5 ?? 10000 12010080 40 20 1000 100 10 1.0 0.1 60 140 0 c t a = 1 25 c t a = 25 0 80 1 100 4 00 160 240 320 10 8 . 3 m s s i ng l e h a l f s i n e w a v e t j = 125 25 50 75 100 125 150 amperes average forward output current, amperes fi g. 3 -- typical forward characteri sti c f i g . 4 - - t y p i c al r e v e r s e c h ara c t e r i s t i c i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s mbr4030pt - - - mbr40100pt nu m be r o f c y c l e s a t 6 0 h z case t e m pe r a t ur e , instantaneous forward current, peak forward surge current, f i g . 2 - - f o r w ard d e ra t i n g cur v e amperes mi lli amperes pe r c e n t o f r a t e d p e ak r eve r se v o l t a g e ,% fi g. 1 -- peak forward surge current instantaneous reverse current, www.diode.kr diode semiconductor korea
|
